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排序方式: 共有9108条查询结果,搜索用时 21 毫秒
991.
提出用丁二酮肟乙醇溶液滴定、电导法确定终点测定镍合金中镍的新方法。在氨性溶液中滴定,铜(Ⅱ)、锰(Ⅱ)、钴(Ⅱ)的干扰通过掩蔽或氧化的方法消除,其它金属离子对测定没有干扰。本方法不受溶液颜色和浊度的影响,试剂用量少,具有准确、快速、干扰少的特点,已用于镍合金中镍的测定,获得了精密度高、准确度好的分析结果。 相似文献
992.
J. D. Althoff Dane Morgan D. de Fontaine M. D. Asta S. M. Foiles D. D. Johnson 《Computational Materials Science》1998,10(1-4):411-415
Recent work had suggested that vibrational effects can play a significant role in determining alloy phase equilibria. In order to better understand these effects, we investigate the vibrational properties of disordered and ordered Ni3Al using the embedded atom method and calculate vibrational thermodynamic quantities within the quasi-harmonic approximation. The vibrational entropy is found to be strongly dependent on volume. For fully relaxed structures the dependence on lattice decoration of the vibrational entropy is compared to that suggested by recent experimental results. 相似文献
993.
Pre-bainitic Transformation in Fe-Ni Alloy 总被引:1,自引:0,他引:1
Thepre-bainiticphenomenonisoneoftheim-portantsubjectsofbainitictransformationwhichisstilcontroversial.Oneviewisthatthesolutea... 相似文献
994.
995.
研究了添加微量稀土氧化物对WC-8Ni硬质合金物理机械性能的影响。在用X射线。射、扫描电镜及透射电镜等手段对含稀土WC-8Ni合金进行显微结构分析的基础上,探讨了稀土在合金中的分布状态、对组织结构的影响及其强化机理。井指出,通过添加微量稀土氧化物,可使WC-8Ni硬质合金的物理机械性能接近和达到YG8的水平。 相似文献
996.
Ni containing 0.00002 to 0.003 wt.% carbon was oxidized in 1 atm O2 at 700 to 1270°C for 1 min to 20 hr. Cavity formation in the metal and oxide and at the oxide-metal interface was affected by the carbon content. Extensive cavitation developed at the grain boundaries of Ni containing as little as 0.0001 wt.% carbon but no cavitation occurred in decarburized Ni. Metal cavitation is dependent on the local concentration of carbon segregated at the Ni grain boundaries rather than on the overall carbon content. The cavities arise from hot deformation or creep of the metal substrate induced by the oxidation process. The cavities in the oxide formed on decarburized Ni remain near the oxide-metal interface; on Ni containing appreciable carbon the oxide cavities migrate outward by a dissociative mechanism assisted by the gaseous transfer of oxygen across the cavities with CO-CO2 acting as the carrier. 相似文献
997.
998.
Contact technology for GaAs involves optimizing such factors as contact resistance or Schottky barrier height, alloy cycle
conditions, thermal ageing, adhesion, and ease of high resolution processing. Minority carrier properties may be significantly
degraded by in-diffusing contact metals. At typical alloying conditions of 10 sec at 500° C, Ni diffuses at least 10 μm and
reduces the hole diffusion length (Lp) in vapor phase epitaxial GaAs from 4.4 to 1.7 ym. At 600°C, Lp becomes 1.0 μm. Other metals, such as Fe, Pt, and Cr, significantly improve Lp in VPE GaAs. Lp increases from 3.0 to 5.0 μm for an Fe diffusion of 5 minutes at 500°C. These improvements may be due to interaction of in-diffused
Fe with recombination centers, such as Ga vacancy complexes or Ni. Fe causes increases in minority carrier diffusion lengths
also in n and p type ingot GaAs, though 800 – 900°C diffusions are required and at these temperatures the doping is significantly
changed by Fe acceptors. 相似文献
999.
J. Laine F. Severino R. Golding 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1984,34(7):387-393
A series of trimetallic (NiCoMo) hydrodesulphurisation supported catalysts were prepared using a successive impregnation method, varying the ratio of promoters Ni/(Ni + Co) and maintaining the ratio (Ni + Co)/Mo constant. Optima for higher thiophene hydrodesulphurisation activity were found for ratios Ni/(Ni + Co) of 0.7 and 0.8. It is suggested that the optima may be strongly dependent on method of catalyst preparation, and/or type of support employed. Presulphidation was found to increase the activity in NiMo more than in CoMo. Testing of commercial catalysts confirmed various differences between CoMo and NiMo catalysts. 相似文献
1000.
The competing reactions between existing Ni silicides surrounded by Si and Ni were investigated by thermal annealing and MeV Si ion beam mixing. With high energy irradiation, the energy deposition at both interfaces, Ni/Ni silicide and Ni silicide/Si, is equal. Two MeV He~- RBS and TEM were used to obtain the reacted layer composition and epitaxial orientation, respectively. Also glancing angle Co K_a. X-ray diffraction was utilized to identify phase formation. The main results indicate that the existing silicides preferentially react with Ni layer, and that there are pronounced differences of Ni silicide phase transition between thermal annealing and MeV Si ion beam mixing, even though the mixing was performed in radiation enhanced diffusion regime. The results can be explained in term of the heat of silicide formation and surface energy change. 相似文献